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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:06 |
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Conference: Bucharest University Faculty of Physics 2005 Meeting
Section: Solid State Physics and Materials Science
Title:
Resonant Electron Field Emission Through Composite Si-DLC Structures
Authors:
L. D. Filip and D. Dragoman
Affiliation:
University of Bucharest, Faculty of Physics, P.O. Box MG-11, Bucharest-Magurele 077125, Romania
E-mail
Keywords:
field emission, resonant structures, negative differential resistance
Abstract:
Dielectric layers have been originally used in field emission to stabilize the emission current and to protect the emitting surface. However, recent research showed that significant amplification of the emission current (with respect to the emission from the bare substrate) may appear when the thickness of the covering layer is in the range of a few nanometers. The most striking effects are the appearance of relative sharp maxima in the current-voltage characteristics followed by regions of negative differential resistance. Such pronounced maxima are often attributed to resonant effects in the dielectric coverings.
In the present contribution we study the electron field emission through composite (layered) structures formed from a dielectric layer deposited on the plane surface of a semiconductor substrate. In our case the substrate is considered to be silicon and the dielectric layer on top of it is diamond-like carbon (DLC). We have obtained an analytical expression for the electron transmission coefficient through this structure and have recovered both the sharp maximum and the negative differential resistance region in the current-voltage characteristics although our treatment is considerably simpler than that in literature. Our results demonstrate the efficiency of electron emission through layered structures that behave resonantly in the presence of an applied electric field as long as the thickness of the DLC layer is smaller than the mean free path of the electrons.
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