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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:04 |
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Conference: Bucharest University Faculty of Physics 2012 Meeting
Section: Solid State Physics and Materials Science
Title:
Influence of metallic electrodes on the analysis of graphene devices
Authors:
A. ZUBAREV, Daniela DRAGOMAN
Affiliation:
Univ. Bucharest, Physics Dept., P.O. Box MG-11, 077125 Bucharest, Romania
E-mail
danieladragoman@yahoo.com
Keywords:
ballistic transport, graphene, device performance
Abstract:
The XXI century society and industry are increasingly dependent on the performances of electronic devices. The electronics based on carbon structures is considered to be a viable alternative of actual Si-electronics. In particular, graphene devices have low energy consumption, can be smaller in size and more efficient than classical electronic devices, at least in some applications. Many of the desirable properties of graphene devices derive from the Dirac-like equation satisfied by charge carriers in this material. Although the theory of graphene devices is well developed, the influence of metallic electrodes and of the semiconductor/graphene interfaces on the electron behavior was not investigated. In this article we analyze the transport of charge carriers in real graphene devices, containing metallic electrodes or consisting also of common semiconductor layers. The challenge posed by these devices is the investigation of transformation of Schrödinger into Dirac-like charge carriers and vice versa, which take place at the metal (semiconductor)/graphene interfaces. A detailed study of this transformation shows that the transmission probability of charge carriers is significantly different compared to the case when no Schrödinger-Dirac transformation of electrons is taken into account. In particular, the transmission coefficient is no longer equal to 1 at normal incidence. We analyze the influence of metallic electrodes and semiconductor layers on the performances of some ballistic graphene-based devices.
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