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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:26 |
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Conference: Bucharest University Faculty of Physics 2005 Meeting
Section: Electricity and Biophysics
Title:
Defect Induced by Electron Irradiation in AII-BVI Pollycrystalline Thin Films
Authors:
S. Antohe, L. Ion, V. A. Antohe, H. Alexandru
Affiliation:
University of Bucharest, Faculty of Physics, P.O.Box: MG-11, Bucharest-Magurele, 077125 Romania
E-mail
santohe@solid.fizica.unibuc.ro
Keywords:
polycrystalline layers, CdS, CdSe, electron irradiation
Abstract:
Thin films of AII-BVI compounds are potential candidates for the manufacturing of electronic and optoelectronic devices, especially solar cells. In this paper the effects of irradiation with high-energy electrons on structural and electrical properties of CdS and CdSe thin films have been investigated. The films, 25-30 m thick, were prepared by thermal-vacuum evaporation on glass substrate at a temperature of 220 C. The samples were irradiated with 6-7 MeV electrons, up to a fluency of 1015 e/cm2. XRD investigation has revealed that the films contain wurtzite-type CdS and CdSe, (001) preferentially oriented in the growth direction. The defects induced by electron irradiation have been studied by using the Space-Charge-Limited-Current (SCLC) measurements and Thermally Stimulated Current Spectroscopy (TSC), respectively. It was found that the electrical conduction of the samples, both before and after irradiation, is controlled by different types of defect distributions, placed in the band gape of the semiconducting layer, particularly in the case of CdSe thin films, a defect having an energy level located at 0.38 eV below the conduction band edge. The possible origin of these defects is discussed.
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