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Conference: Bucharest University Faculty of Physics 2003 Meeting

Section: Atomic and Molecular Physics; Astrophysics

Title:

INVESTIGATION OF THE STORED CHARGE IN SILICON QUANTUM DOTS BY TAPPING AND ELECTROSTATIC FORCE MICROSCOPY (invited lecture)

Authors:

P. Budau1, C. Guillemot2, J. Chevrier3, P. Mur4

Affiliation:

1. Faculty of Physics, University of Bucharest

2. 2. ESRF, F-38043 Grenoble, Cedex 9, France

3. LEPES -CNRS Grenoble, Cedex 9, France

4. CEA-LETI, Departement des Technologies Silicium, Grenoble, France

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Keywords:

Abstract:

Silicon quantum dots with a size less than 10 nm embedded in silicon oxide, open the possibility the possibility to produce non-volatile gate memory, directly integrated in MOSFET architecture. These devices are based on Coulomb blocade effect and their characteristics allow their operation at room temperature. We studied the charge storage and subsequent imaging of silicon quantum dots embedded in SiO2 film by using atomic force microscopy ( AFM) in tapping and electrostatic force microscopy ( EFM) models [1]. The controllable deposition of both positive and negative localized charges in silicon dots is described. The dynamics of the deposited charges is studied and the charge decay time constant is determined from the measurements. A simple analysis is presented to explain the contrast in tapping and EFM images and to quantify the total amount of stored charge. [1]. C. Guillemot, P. Budau, J. Chevrier, et.al. Erophys. Lett.,59,p. 566 (2002)