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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:26 |
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Conference: Bucharest University Faculty of Physics 2010 Meeting
Section: Nuclear and Elementary Particles Physics
Title:
RBS and PIXE characterization of InN thin films
Authors:
I. Burducea (1,3), M. Braic (2), V. Braic (2), L. S. Craciun (1), D. Dudu (1), C. Ionescu (1), M. Straticiuc (1,3), I. Vata (1), C.N. Zoita (2), P.M.Racolta (1)
Affiliation:
(1) Horia Hulubei National Institute of Physics and Nuclear Engineering - IFIN HH, Str. Atomistilor no.407, Magurele – 077125, Ilfov, Romania
(2) National Institute for Optoelectronics, Str. Atomistilor no.409, Magurele – 077125, Ilfov, Romania
(3) Atomic and Nuclear Physics Chair, Faculty of Physics, University of Bucharest, Romania
E-mail
bion@nipne.ro
Keywords:
Rutherford backscattering spectrometry, Particle induced X-ray emission, Indium nitride.
Abstract:
The ion beam analysis (IBA) techniques of Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission have been used to quantitatively determine the elemental composition of indium nitride (InN) thin films, deposited on yttria-stabilized zirconia (YSZ), by reactive magnetron sputtering in pure nitrogen atmosphere. During InN film growth the substrate temperature was varied in the range of 350-550 0C. RBS analysis indicated that the thin films are InxN1-x type, with no oxygen in the composition. The obtained results indicate the stoichiometry of the hexagonal InN thin films is influenced by the deposition temperature.
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