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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-25 0:02 |
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Conference: Bucharest University Faculty of Physics 2011 Meeting
Section: Nuclear and Elementary Particles Physics
Title:
RBS and AFM analysis of InN and ZnO nanostructures
Authors:
I. Burducea(1,2), L. S. Craciun(1,2), C. Ionescu (1,2), M. Straticiuc(1,2), P. M. Racolta(1)
Affiliation:
(1)Horia Hulubei National Institute of Physics and Nuclear Engineering, 30 Reactorului St., Magurele, Ilfov, 077125, Romania
(2)Faculty of Physics, University of Bucharest, 405 Atomistilor St., Magurele, Ilfov, 077125, Romania
E-mail
bion@nipne.ro
Keywords:
RBS, AFM, InN, ZnO.
Abstract:
Indium nitride (InN) and ZnO thin films have become very attractive because of their potential applications in liquid crystal displays, thin film transistors and light-emitting diodes. Obtaining ideal growth conditions for the semiconductors of InN and ZnO is still a challenge for the fabricants. In this paper we report the deposition of InN thin films and ZnO by RF reactive magnetron sputtering method. In order to characterize the obtained thin films, atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) were used. RBS method was used to determine stoichiometry and thickness of the thin films. AFM gave information regarding the topography of the surfaces. These results could improve the production process.
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