UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS

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2024-11-22 2:26

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Conference: Bucharest University Faculty of Physics 2005 Meeting


Section: Electricity and Biophysics


Title:
Defects Induced by Electron-Irradiation in Polycrystalline CdSe Thin Films Investigated by Thermally Stimulated Current Method


Authors:
L. Ion, C. Tazlaoanu, V. A. Antohe, , Larisa Magherusan, Oana Ghenescu, M. Ghenescu, Felicia Ionescu, V. Covlea, I. Stan, S. Antohe


Affiliation:
Faculty of Physics, University of Bucharest, P.O. Box MG-11, Bucharest-Măgurele, 077125, Romania


E-mail
santohe@solid.fizica.unibuc.ro


Keywords:
Polycrystalline Films, CdSe, Electron Irradiation, Thermally Stimulated Currents


Abstract:
Defects determining the electrical properties of CdSe thin films, before and after irradiation with high-energy electrons, have been investigated by thermally stimulated current (TSC) technique. Thin films of CdSe, 30 m thick, prepared by thermal vacuum evaporation on glass substrate at a temperature of 220 ºC were subjected to irradiation with 6 MeV electrons to a fluency of 5 1013 e/cm2. The main defect (D1), controlling the electrical properties of the films both before and after irradiation, is located at 0.38 eV below the conduction band edge. Some other defects, existing in lower densities and having lower ionization energies (0.24 eV - D2, 0.17 eV - D3 and 0.14 eV - D4) were also identified. Electron irradiation induces a significant increase of the peaks associated to the defects D1, D2 and D3, especially of the first one. The parameters characterizing all the detected traps were determined.