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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:06 |
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Conference: Bucharest University Faculty of Physics 2001 Meeting
Section: Solid State Physics and Materials Science
Title:
ELECTRICAL PROPERTIES OF NONIRRADIATED AND ELECTRON IRRADIATED THIN POLYCRYSTALLINE CdSe LAYERS
Authors:
L. Ion, Roxana Schiopu, V. A. Antohe, V. Ruxandra, S. Antohe
Affiliation:
Faculty of Physics, University of Bucharest, P.O.Box MG-11, Bucharest-Magurele, 76900, Romania
E-mail
Keywords:
Abstract:
Electrical properties of nonirradiated and electron irradiated thin layers of CdSe, sandwiched between two gold electrodes, were investigated. Thin films of CdSe, prepared by thermal-vacuum evaporation on glass substrate at a temperature of 220 °C, were subjected to two sessions of irradiation with 7 MeV electrons to the fluences of 2´1015 e/cm2 and 4´1015 e/cm2, respectively. The current-voltage characteristics, recorded at temperatures in the range 150÷350 K, showed that the Ohm’s law is followed at low-applied voltages, in both nonirradiated and irradiated CdSe layers. In the range of high-applied voltages, the space-charge-limited-current (SCLC), controlled by a Gaussian trap distribution, placed in the vicinity of the Fermi level, has been identified as the dominant conduction mechanism. An analysis in the frame of SCLC theory allowed us to obtain the parameters characterising the trap distribution and their changes induced by electron irradiation.
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