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Conference: Bucharest University Faculty of Physics 2001 Meeting

Section: Atomic and Molecular Physics; Astrophysics

Title:

Defects in Ionic Implanted SiO2/Si

Authors:

M. Bercu, V.V.Grecu

Affiliation:

University of Bucharest, Physics deparment, P.O. Box MG -11

Bucharest, Romania

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Keywords:

Abstract:

The nature and thermal recovery behaviour of paramagnetic centres in implanted Si/SiO2 structures having different SiO2 film thicknesses are reported. EPR and UV optical reflectance spectroscopy have been used to study the thermal behaviour of defects produced by P+ ions implanted in the Si at energies of 100-150 KeV and doses of 1015-1016 ions/cm2. Different paramagnetic centres are identified. A paramagnetic centre in Si was observed at g=2.006[1]; its thermal recovery activation energy is 0.15 eV. Bulk SiO2 defects have been identified at g=2.001 (E centre, [2]) and g=2.000. The Pb [3-4] centre, at the oxide/silicon interface, has been observed in samples implanted with O+ ions; it belongs to the border of SiOx clusters which aggregate in bulk silicon. For high doses a continuous buried oxide layer is produced by coalescence processes of the SiOx clusters generated in subsequent annealing. The recovery of defects in the implanted layer was observed by UV optical reflectance spectroscopy. Two mechanisms of defect recombination have been observed. The short time decay process, determined by both EPR and optical spectroscopy, indicates that during the first stage of thermal recovery the paramagnetic centres turn first into diamagnetic ones. The annealing of these diamagnetic defects has a much longer recovery constant. References. [1] B.L. Crowder, R,S. Title, M.B. Brodsky, G.D. Petit, Appl.Phys.Lett., 16, 205, 1970.