Faculty of Physics - University of Bucharest

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FACULTY OF PHYSICS

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2024-11-22 2:12

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Conference: Bucharest University Faculty of Physics 2011 Meeting

Section: Solid State Physics and Materials Science

Title:

Study of the Photovoltaic Properties of CdS/CdTe Heterojunction Solar Cells Before and After Proton Irradiation

Authors:

Veta Ghenescu(2), L. Ion(1), Sorina Iftimie(1), M. Radu(1), I. Stan(1,2), Cristina Besleaga(1), C. Tazlaoanu(1), A. Radu(1), M. Ghenescu(2), O. Porumb(1), M.M. Gugiu(3), S. ANTOHE(1)

Affiliation:

1) University of Bucharest, Faculty of Physics, 405 Atomistilor Street, PO Box MG-11, 077125, Magurele-Ilfov, Romania

2) Institute for Space Sciences, 409 Atomistilo Street, PO Box MG-23, 077125, Magurele-Ilfov, Romania

3) "Horia Hulubei" National Institute of Physics and Nuclear Engineering - IFIN HH, 407 Atomistilor Street, PO Box MG-6, 077125, Magurele-Ilfov, Romania

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Keywords:

Solar cells, cadmium telluride, thin films, proton irradiation

Abstract:

Due to their physical and chemical properties (suitable band gaps, large absorption coefficients and good chemical stability), the A2-B6 semiconducting compounds are potential candidates in electronic and optoelectronic applications. Particularly, CdS and CdTe thin films are based materials for second generation of solar cells, used both in terrestrial and space applications. In this work we report the experimental results of high-energy proton irradiations of 3 MeV and fluency of 3x1014 protons/cm2 on CdS/CdTe heterojunction solar cells. The photovoltaic cells were developed on ITO coated optical glass substrates, by conventional thermal vacuum evaporation technique. The CdS/CdTe is given a post deposition CdCl2 heat treatment which enables grain enhancement, reduces the defect density in the films, promotes the interdiffusion of the CdTe and CdS layers and thereby improves solar cell efficiency. The effects of irradiation were studied by investigating the changes in the electrical and optical properties of the cells. It was found that proton irradiation in the above mentioned conditions results mainly in the introduction of defects at the CdS/CdTe interface. From the I-V characteristics in fourth quadrant, at illumination in A.M. 1.5 conditions, the typical parameters as photo element (short-circuit current, open-circuit voltage, fill factor, power conversion efficiency), were determined, before and after proton irradiation, and the effect of ionizing radiation on their values is discussed.