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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:07 |
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Conference: Bucharest University Faculty of Physics 2015 Meeting
Section: Solid State Physics and Materials Science
Title:
Modelling capacitance-voltage characteristic of BaTiO3 based ceramics
Authors:
Dorin RUSU (1), Lucian PINTILIE(2), Lucian FILIP (2), Ciceron BERBECARU (1)
Affiliation:
1) Faculty of Physics, University of Bucharest, Fizicienilor Nr.5, Magurele 077125, Romania
2) INCDFM, Atomistilor, 105 bis, Magurele 077125, Romania
E-mail
rusuadorin@gmail.com, pintiluc@yahoo.com, lucian.filip@infim.ro, berbecaru2ciceron@yahoo.com
Keywords:
BaTiO3 film, capacitance-voltage characteristic simulation, equivalent circuit
Abstract:
The capacitance-voltage characteristic of barium titanate ceramic was simulated employing a simple model. The problem is treated electrostatically and transport phenomenon like thermoelectronic emission, Poole-Frenkel, tunneling etc. were not taken into account. The electrode was considered to be an electron reservoir and its band structure remains unaltered by the ferroelectric. At the interface, a passive layer, which possesses electric charge but has no polarization properties and its width remains unchanged with respect to voltage, was considered. Polarization was supposed to be uniform in the bulk of the ferroelectric and the polarization charges are placed within two sheets, both located in the vicinity of each interface. At one of the two electrodes, a space charge region that is separated from the passive layer by the polarization sheet was considered. Because the ferroelectric material has its own free charges, at the other electrode, an electric charge cloud will form and this contact was considered to be purely resistive. In the space charge region, Poisson equation was solved with specific boundary conditions. To find the capacitance, an equivalent circuit was considered. One of the interfaces was replaced by a simple capacitance and the other interface was considerd to introduce a resistive effect. The bulk region was related to an R-C parallel circuit. Values for the used R-C components were obtained by fitting the experimental data with the simulated curves. The obtained results were found to be in good agreement with the experimental data obtained in the literature, [1].
References:
[1] Pintilie et. al, J. Appl. Phys. 116, 044108 (2014)
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