| |
 |
UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-23 17:52 |
 |
|
|
|
Conference: Bucharest University Faculty of Physics 2016 Meeting
Section: Solid State Physics and Materials Science
Title:
Cooling nanoelectronic devices with p-n junction connected to termocouple
Authors:
Stefan DOMOKOS
Affiliation:
DOMOKOS E. STEFAN PFA, Buzau
E-mail
sqdomokos@yahoo.com
Keywords:
Abstract:
The cooling device of nanoelectronic devices is made from a p-n junction in which the heat is producing holes in the p regions and electrons in the n region, and the electrons from the p region can move to the n region as in the process described in Chapin et al. (1954) [1], and the resulting current is producing heat on a thermocouple, which is preferably containing Constantan as that presented by Juarez-Acosta et al. (2016) [2]. It is well known that during annealing at 300-350℃ are produced thermal donors which are believed to be interstitial oxygen, and which are doubly ionized at room T providing each two free electrons as presented by Tomassini et al. (2016) [3]. Donors which are ionized at higher temperature, 50-100℃ are suitable for the cooling device.
References:
[1] Chapin, D. M., Fuller, C. S., and Pearson, G. L., A New Silicon p-n Junction Photocell for Converting Solar Radiation into Electric Power, J. Appl. Phys. 25, 676 (1954).
[2] Juarez-Acosta, Isaac, Olivares-Robles, Miguel A., Bosu, Subrojati, Sakuraba, Yuya, Kubota, Takahide, Takahashi, Saburo, Takanashi, Koki, and Bauer, Gerrit E. W., Modelling of the Peltier effect in magnetic multilayers, J. Appl. Phys. 119, 073906 (2016).
[3] Tomassini, M., Veirman, J., Varache, R., Letty, E., Dubois, S., Hu, Y., and Nielsen, Ø., Recombination activity associated with thermal donor generation in nanocrystalline silicon and effect on the convertion efficiency of heterojunction solar cells, J. Appl. Phys. 119, 084508 (2016).
|
|
|
|