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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-23 18:14 |
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Conference: Bucharest University Faculty of Physics 2016 Meeting
Section: Atomic and Molecular Physics. Astrophysics. Applied Nuclear Physics
Title:
Ion implantation of Au and Nb in various samples
Authors:
Florin Ioan CONSTANTIN (1), Ion BURDUCEA(2)
Affiliation:
1)Faculty of Physics, University of Bucharest, Romania
2)Horia Hulubei National Institute of Physics and Nuclear Engineering, IFIN-HH, Magurele, Romania
E-mail
florinioanctin@yahoo.com
Keywords:
ion implantation, RBS
Abstract:
Ion implantation is used to modify the electrical, chemical or optical properties of advanced materials. High energy ion implantation, from hundreds of keV to a few MeV, is currently available at IFIN-HH on a dedicated beam line from the 3 MV TandetronTM accelerator [1]. In order to prepare an implantation experiment simulations of range and ion distribution are needed. We simulate Au ion implantation into Al, Si and a polymer resin targets at 1.5 MeV with SRIM and TRIM in order to compare the range and ion profiles [2]. One important parameter in establishing and tuning the desired properties of materials after ion implantation is the precise control of the dose (atoms/cm2). In this paper we present the implantation of a dose of 2e15 atoms/cm2 of Nb+ at 1.7 MeV into a silicon wafer. In order to verify this we have used Rutherford Backscattering Spectrometry (RBS) to get the implantation profile and dose. The results show a good agreement between the given dose and the value obtained from SIMNRA simulation of the RBS spectrum [3].
References:
[1] A new ion beam facility based on a 3 MV TandetronTM at IFIN-HH, Romania, I. Burducea, M. Straticiuc, D.G. Ghita, D.V. Mosu, C. I. Calinescu, N.C. Podaru, D.J.W. Mous, I. Ursu and N.V. Zamfir / Nuclear Instruments and Methods in Physics Research B 359 (2015) 12–19.
[2] http://www.srim.org
[3] http://home.mpcdf.mpg.de/~mam/
Acknowledgement:
Ion Burducea
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