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2024-11-23 18:18

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Conference: Bucharest University Faculty of Physics 2016 Meeting

Section: Solid State Physics and Materials Science

Title:

Investigation on dielectric/ferroelectric properties of lithium doped zinc oxide

Authors:

L. M. TRINCA(1,2), A.C. GALCA(2), A.G. BONI(2), R. RADU(2), A. IUGA(2), L. PINTILIE(2)

Affiliation:

1) Faculty of Physics, University of Bucharest, 405 Atomistilor Street, PO Box MG-11, 077125, Magurele-Ilfov, Romania

2) National Institute of Materials Physics, 405A Atomistilor Str., 077125 Magurele, Ilfov, Romania

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Keywords:

Abstract:

Zinc oxide (ZnO) is a transparent material in the visible range of light spectrum, being highly attractive for electronic applications due to its low price and possibility of varying the electrical properties. It’s versatility in terms of electrical properties makes it adequate for different applications in electronics: from transparent electrodes (by doping with Al[1] or In[2]) to resistive layer or dielectric ceramic (by doping with Li[3]) or semiconducting channel (complex oxide with In, Ga and Zn[4]). Moreover, the lithium doped zinc oxide was reported to be ferroelectric due to the large difference in atomic radius of the two implied cations [3] – zinc and lithium. In this work will be presented the dielectric and ferroelectric investigations on lithium doped zinc oxide, in ceramic and thin films structures. Moreover, a comparative study of LZO based epilayers and polycrystalline thin films, in respect with the structural and electrical properties will be presented. Epitaxial structures are achieved on single crystal substrates (SrTiO3 and ZnO), while the polycrystalline thin films are obtained on platinized silicon substrates.

References:

[1] J. G. Lu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, L. Wang, J. Yuan, B. H. Zhao, Q. L. Liang, J. Appl. Phys. 100, 073714 (2006)

[2] Z. Hu, B. Jiao, J. Zhang, X. Zhang, Y. Zhao, Int. J. Photoenergy 2011 (2011) 158065

[3] A. Onodera, K. Yoshio, H. Satoh, T. Takama, M. Fujita, H. Yamashita, Ferroelectrics 230 (1999) 163

[4] K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, H. Hosono, Jpn. J. Appl. Phys. 45 (2006) 4303