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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-23 17:54 |
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Conference: Bucharest University Faculty of Physics 2017 Meeting
Section: Solid State Physics and Materials Science
Title:
Magnetic tunnel junction
Authors:
Stefan DOMOKOS (1)
Affiliation:
1) DOMOKOS E. STEFAN PFA, Buzau
E-mail
sqdomokos@yahoo.com
Keywords:
Magnetic tunnel junction
Abstract:
It was found that the resistivity of (001)Fe/(001)Cr is lowered by a big value in a magnetic field [1]. The cause of this giant magnetoresistance is that the transition of the conduction electrons between the two layers is function on the spin [1]. A tunnel barrier between two ferromagnetic layers is a magnetic tunnel junction (MTJ) which is used for nonvolatile memory, spin field-effect transistor and spin logic devices [2]. This MTJ can be obtained by the deposition of the first ferromagnetic layer in a magnetic field, than is deposited the tunnel barrier, than is deposited the second ferromagnetic layer in an opposite magnetic field.
References:
[1] M. N. Baibich, J. M. Broto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Etienne, G. Creuzet, A. Friederich, and J. Chazelas, Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices, Phys. Rev. Lett. 61, 2472 (1988).
[2] Keyu Ning, Houfang Liu, Zhenyi Ju, Chi Fang, Caihua Wan, Jinglei Cheng, Xiao Liu, Linsen Li, Jiafeng Feng, Hongxiang Wei, Xiufeng Han, Yi Yang, and Tian-Ling Ren, Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy, AIP Advances 7, 015035 (2017).
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