UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS

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2024-11-22 1:33
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Conference: Bucharest University Faculty of Physics 2018 Meeting


Section: Polymer Physics


Title:
Development of solar cells from n-doped silicon and polyanniline P-type layers obtained by plasma polymerization process


Authors:
Bogdan BUTOI (1,2), Paul DINCA (1,2), Vlad LUPU (1), Cornel STAICU (1,2), Dumitru STAICU (1), Valentin BARNA (1), Emil-Stefan BARNA (1)


*
Affiliation:
1)University of Bucharest, Faculty of Physics, P.O.BOX MG-11, Magurele, Bucharest, Romania

2) Institutul National pentru Fizica Laserilor, Plasmei si Radiatiei, Str. Atomistilor nr 409, Magurele, Romania


E-mail
bogdan.butoi@g.unibuc.ro


Keywords:
solar cell, p-n junction, clean energy, renewable energy, polyaniline, plasma polymerization method


Abstract:
Solar power represents an important and unlimited source of clean and renewable energy, which currently is in most part employed in heating and electricity production. Conductive polymers such as polyaniline present an important advantage due to their relatively cheap cost of synthesis and extensive range of electrical conductivity from metal-like to insulator properties. Using the plasma polymerization method, the chemical composition of the polyaniline layers may be tailored in order to alter physical properties such as its band-gap. Another interesting feature is represented by the variation of electrical and optical properties at room temperature. These properties promote polyaniline as a good candidate for the development of sensitive p-n junction with application in solar cells. The typical structure of this devices consists of two materials with donor and acceptor properties, sandwiched between two electrodes which presents a relative ease in terms of procesability. In this contribution we developed a hybrid solar cell composed of conductive polymer/ n-doped silicon structure. The n-doped single crystalline silicon is commercially available while the polyaniline layer was deposited using plasma polymerization method. To minimize the contact resistance on top of silicon, a grid of electrical contacts composed of a 2µm copper layer was deposited using Thermionic Vacuum Arc method. Due to the sensitivity of the polyaniline layer to thermal processes the electrical contact was deposited using Direct Current Magnetron sputtering technique. Measurements were performed on the polyaniline layers in order to asses their conductive properties and the current-voltage characteristics were plotted for the obtained hybrid solar cell structure.