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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:21 |
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Conference: Bucharest University Faculty of Physics 2021 Meeting
Section: Solid State Physics and Materials Science
Title:
Effect of RF power on structural, morphological, optical and electrical properties of RF – sputtered ZnSe thin films for electronic and optoelectronic applications
Authors:
Ana–Maria PANAITESCU(1), Vlad-Andrei ANTOHE(1,2), Sorina IFTIMIE(1), Ovidiu TOMA(1), Lucian ION(1), Adrian RADU(1), Ștefan ANTOHE(1,3)*
*
Affiliation:
(1)University of Bucharest, Faculty of Physics, R&D Center for Materials and Electronic & Optoelectronic
Devices (MDEO), Atomiștilor Street 405, 077125 Măgurele, Ilfov, Romania
(2)Université catholique de Louvain (UCLouvain), Institute of Condensed Matter and Nanosciences (IMCN),
Place Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgium
(3)Academy of Romanian Scientists, 030167, Bucharest, Romania
*Corresponding author: santohe@solid.fizica.unibuc.ro (S. Antohe)
E-mail
anamaria.pam11@yahoo.ro
Keywords:
ZnSe thin films; RF-magnetron sputtering; XRD; SEM; AFM; spectroscopic ellipsometry
Abstract:
A comparative deposition power study has been performed for zinc selenide (ZnSe) thin films prepared by RF- magnetron sputtering on optical glass substrates. By varying their RF power between 60W and 120 W, 4 thin films have been structurally characterized by X-ray diffraction (XRD) revealing polycrystalline ZnSe films with pronounced (111) texture, whereas the crystalline structure parameters were determined by Bragg-Brentano theta-theta geometry analysis. Morphological investigations by scanning electron microscopy (SEM) and atomic force microscopy (AFM) allowed a first evaluation of their thicknesses, along with the samples’ roughness. Optical characterization was performed via absorption and transmission measurements in the spectral range between 200-1200 nm at room temperature. Subsequently, the thicknesses and band gap energies of ZnSe thin films were determined, the values ranging between 37.6 nm up to 340.5 nm, and between 2.5 eV and 2.66 eV. By using spectroscopic ellipsometry (SE) the values obtained via absorption and transmission spectra were compared with the ones determine through SE. Moreover, the dependencies of the optical constants (refractive indices and extinction coefficients) on the incident wavelength of the RF-sputtered ZnSe thin films are envisaged. Electrical measurements of Au/ZnSe/Au sandwich structured with ZnSe prepared at 100 W RF-sputtered power were performed. The complete and thorough characterization of the ZnSe thin films revealed that the smoothest, having the best structural and optical properties ZnSe thin film has been obtained for 100 W RF power.
Acknowledgement:
Support from the "Executive Unit for Financing Higher Education, Research, Development and Innovation" (UEFISCDI, Romania) through the grants: PN-III-P1-1.1-TE-2019-0868 (TE 115/2020) and PN-III-P1-1.1-TE-2019-0846 (TE 25/2020) is acknowledged.
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