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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:11 |
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Conference: Bucharest University Faculty of Physics 2012 Meeting
Section: Atomic and Molecular Physics; Astrophysics
Title:
Silicon oxynitride characterization by Uv-Vis spectrometry
and Rutherford backscattering
Authors:
M.BERCU (1), V.CHITOIU (1), D.DUDU (2), Elena MANEA (3), E.IVANOV (2)
Affiliation:
(1) Faculty of Physics, University of Bucharest, Magurele- Bucharest , P.O.Box MG-11
(2) Research Institute Of Nuclear Physics and Engineering - IFIN Bucharest, Magurele Romania
(3) National Research Institute Of Microtehnology IMT Bucharest
E-mail
mircea_bercu2@yahoo.com
Keywords:
Oxynitride films, Rutherford backscattering, Uv-Vis spectroscopy,transfer matrix, optic spectra simulation.
Abstract:
Non-destructive analysis based on complementary techniques as Ultraviolet-Visible spectroscopy (UV-Vis) and Rutherford Backscattering (RBS) are used for the characterization of SiON films. The effect of oxygen incorporation in pure silicon nitride films is studied by comparative investigations using SiO2 and Si3N4 deposited films on crystalline silicon substrate. This contribution focuses on the advantages of coupling UV-Vis and RBS techniques, showing the correlation between refractive index and the chemical content of Si, O and N of SiON samples. The widths of the stacked layers are determined by means of both RBS and optical spectroscopy. The refractive index is extracted from the experimental UV-Vis data by a fitting procedure based on the simulation of the light reflected spectrum. The developed computation model uses the transfer matrix theory of the electromagnetic waves propagation through non-homogeneous materials. The approach takes into account optical transitions of the silicon substrate which modulate the reflectance spectra of the samples
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