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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:07 |
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Conference: Bucharest University Faculty of Physics 2006 Meeting
Section: Electricity and Biophysics
Title:
Effect of the Proton Irradiation on Structural and Electrical Properties of AII-BVI Pollycrystalline Thin Films Used as Solar Cell Materials for Space Applications
Authors:
Oana Ghenescu, M. Ghenescu, V. A. Antohe, L. Ion, S. Antohe
Affiliation:
University of Bucharest, Faculty of Physics, P.O.Box: MG-11, Bucharest-Magurele, 077125 Romania
E-mail
santohe@solid.fizica.unibuc.ro
Keywords:
polycrystalline layers, CdS, CdSe, proton irradiation
Abstract:
Thin films of AIIBVI compounds are potential candidates for the manufacturing of electronic and optoelectronic devices, especially solar cells. In this paper the effects of irradiation with high-energy protons on structural and electrical properties of CdS and CdSe thin films have been investigated. The films, 25-30 m thick, were prepared by thermal-vacuum evaporation on glass substrate at a temperature of 220 C. The samples were irradiated with 3 MeV protons, up to a fluency of 1013 e/cm2. XRD investigation has revealed that the films contain wurtzite-type CdS and CdSe, (001) preferentially oriented in the growth direction. The defects induced by proton irradiation have been studied by using the Thermally Stimulated Current Spectroscopy (TSC). It was found that the electrical conduction of the samples, both before and after irradiation, is controlled by different types of defect distributions, placed in the band gape of the semiconducting layer, particularly in the case of CdSe thin films, a defect having an energy level located at about 0.3 eV below the conduction band edge. The possible origin of these defects is discussed.
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