UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS

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Conference: Bucharest University Faculty of Physics 2004 Meeting


Section: Solid State Physics and Materials Science


Title:
Electrical Relaxation Phenomena in Porous Silicon


Authors:
Adrian Dafinei, Ana Ioanid, Ion Munteanu


Affiliation:
Solid State Department, Faculty of Physics, University of Bucharest


E-mail
aioanid@solid.fizica.unibuc.ro


Keywords:
electrical relaxation, porous silicon


Abstract:
Electrical dispersion phenomana in ionic conductors are presumed to be connected with the long-range ionic diffusion process involving jumps over free energy barriers of varying heights. Ionic conductivity is a series process involving consecutive hops of an ion over potential energy barriers along the direction of the electric field.As impedances rather than admittances are additive for a series process, electrical relaxation data for porous silicon are presented and analysed in terms of the electric modulus, defined by a complex invers permittivity or, by analogy to mechanical relaxation.