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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:01 |
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Conference: Bucharest University Faculty of Physics 2004 Meeting
Section: Optics, Spectroscopy, Plasma and Lasers
Title:
Characterization of microstructure of CaxCo4Sb12 films prepared by pulsed laser deposition
Authors:
D. Colceag1, M. Dinescu1, A. Dauscher2, M. Puyet2, B. Lenoir2
Affiliation:
1 NILPRP, P.O. Box MG-16, RO-77125 Bucharest, Romania
2 Laboratoire de Physique des Matériaux, UMR 7556, Ecole Nationale Supérieure des Mines de Nancy, Parc de Saurupt, F-54042 Nancy, France
E-mail
Keywords:
skutterudite, Pulse Laser Deposition, Dielectric constant, Radiofrequency assisted PLD, Ablation film deposition
Abstract:
We present our preliminary results concerning the deposition of skutterudite thin films. Partially filled CoSb3 skutterudite compounds are emerging materials for thermoelectric energy conversion at high temperature. CaxCo4Sb12 skutterudite thin films have been grown on Si(100) substrates in our laboratory by pulsed laser deposition using a Q- switched Nd:YAG laser working at 532 or 355 nm. Emphasis was put on the best way to produce high crystalline and low stress films with the desired stoichiometry, by varying the deposition parameters. Influence of deposition temperature, laser fluence and wavelength and working atmosphere on the structure and morphology of the films has been studied. Characterization has been carried out by X-ray diffraction, atomic force microscopy and scanning electron microscopy. Laser wavelength was found to be the most significant parameter which influences the formation of the skutterudite phase.
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