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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 2:06 |
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Conference: Bucharest University Faculty of Physics 2010 Meeting
Section: Solid State Physics and Materials Science
Title:
Metal-semiconductor transition in q-2D disordered systems
Authors:
Cristina Besleaga (1), Magdalena Nistor (2), Iulia Arghir (1), Sabina Simon (1), L. Ion (1), S. Antohe (1)
Affiliation:
(1) University of Bucharest, Faculty of Physics, 405 Atomistilor Street, Magurele-Ilfov, 077125, Romania
(2) National Institute for Lasers, Plasma and Radiation Physics, L22, P.O. Box MG-36, 77125 Bucharest-Magurele, Romania
E-mail
cristina@solid.fizica.unibuc.ro
Keywords:
disordered systems, ZnO, Hall effect, resistivity
Abstract:
We discuss in this paper some aspects on the progress made in the last decade in understanding the properties of disordered electronic systems. There are two important ingredients in this new understanding: the concept of Anderson localization and the effects of interaction between electrons in a disordered medium. This paper emphasizes some theoretical aspects. Relevant experiments were performed on ZnO thin films which are grown by pulsed-electron beam deposition under a low residual oxygen pressure on Al2O3 substrates. The films were characterized from structural (XRD) and compositional (RBS) point of view. The results of resistivity and Hall effect measurements, from room temperature down to liquid helium, are discussed.
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