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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 1:55 |
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Conference: Bucharest University Faculty of Physics 2010 Meeting
Section: Biophysics and Medical Physics;Electricity and Magnetism
Title:
Transport Mechanisms in CdS Thin Films Before and After Irradiation with High Energy Protons
Authors:
OANA PORUMB 2, VETA GHENESCU 1, G. VELISA 3, SORINA IFTIMIE 2, M. GHENESCU 1, I. STAN 1, M. GUGIU 3, B. GUSTER 2, S. ANTOHE 2
Affiliation:
1 Institute of Space Sciences, 409 Atomistilor Street, PO Box: MG-23, 077125, Magurele-Ilfov, Romania;
2 University of Bucharest, Faculty of Physics, 405 Atomistilor Street,PO Box: MG-11, 077125, Magurele-Ilfov, Romania
3“Horia Hulubei” - National Institute of Physics and Nuclear Engineering, 407 Atomistilor Street, PO Box: MG-6, 077125, Magurele-Ilfov, Romania
E-mail
santohe@solid.fizica.unibuc.ro
Keywords:
Cadmium sulphide, thin films, proton irradiation
Abstract:
We report on electrical properties of polycrystalline CdS thin films prepared by thermal vacuum evaporation of CdS powder onto a optical glass substrate. The obtained CdS layers were subjected to irradiation with protons supplied by a Van der Graaff accelerator. Irradiation was carried out in an evacuated chamber, at ambient temperature, with 3 MeV protons to different fluencies. The electrical measurements were recorded in the temperature range of (4 – 300) K using a Hellium recirculated cryostat. An activated electrical resistance was observed, with activation energy of 0.062 eV at temperatures larger than 100K before irradiation and 60K after irradiation. The effects of irradiation are discussed, based on the temperature dependence of resistivity and Hall coefficient.
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