Faculty of Physics - University of Bucharest

UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS

Guest
2024-11-22 2:31

HOME CONFERENCES SEARCH LOGIN NEW USER IMAGES

Conference: Bucharest University Faculty of Physics 2004 Meeting

Section: Nuclear and Elementary Particles Physics

Title:

Silicon detectors operating beyond the LHC collider conditions: scenarios for radiation fields and detector degradation (Work in the frame of CERN RD-50 Collaboration)

Authors:

I. Lazanu (1) S. Lazanu (2)

Affiliation:

(1): University of Bucharest, Faculty of Physics, POBox MG-11, Bucharest-Magurele, Romania

e-mail: i_lazanu@yahoo.co.uk

(2): National Institute for Material Science, POBox MG-7, Bucharest-Magurele, Romania,

e-mail: lazanu@infim.ro

E-mail

Keywords:

LHC, Silicon detector degradation

Abstract:

Particle physics makes its greatest advances with experiments at the highest energies. The way to advance to a higher energy regime is through hadron colliders, or through non-accelerator experiments, as for example the space astroparticle missions. In the near future, the Large Hadron Collider (LHC) will be operational, and beyond that, its upgrades: the Super-LHC (SLHC) and the hypothetical Very Large Hadron Collider (VLHC). At the present time, there are no detailed studies for future accelerators, except those referring to LHC. For the new hadron collider LHC and some of its updates in luminosity and energy, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation of the silicon as material and for silicon detectors, during continuous radiation, in these hostile conditions. The behaviour of silicon in relation to various scenarios for upgrade in energy and luminosity is discussed in the frame of a phenomenological model developed previously by the authors and now extended to include new mechanisms, able to explain and give solutions to discrepancies between model predictions and detector behaviour after hadron irradiation. Different silicon material parameters resulting from different technologies are considered to evaluate what materials are harder to radiation and consequently could minimise the degradation of device parameters in conditions of continuous long time operation.