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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-21 19:56 |
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Conference: Bucharest University Faculty of Physics 2008 Meeting
Section: Nuclear and Elementary Particles Physics
Title:
Energy deposited by radiation in solids: registration physics
Authors:
I. Lazanu (1), S. Lazanu (2)
Affiliation:
(1) University of Bucharest, Faculty of Physics, POBox MG-11, Bucharest-Măgurele, Romania
(2) National Institute for Materials Physics, POBox MG-7,
Bucharest-Măgurele, Romania
E-mail
ionel.lazanu@g.unibuc.ro
Keywords:
energy deposited by radiation; particles; ions; electronic and nuclear processes; phonons; temperature
Abstract:
The knowledge of the interactions of particles and clusters with matter represents a fundamental aspect for a wide diversity of applications: the development of new materials for devices able to work in hostile conditions (high fields of radiation, extreme temperature or pressure), new principles and techniques of detection, reactor waste technologies, medical applications, dosimetry, etc.
For a projectile particle, its energy loss in the target material is usually partitioned between electronic and nuclear processes, as phonons generated by the vibrations of the lattice in crystals, or as radiation. All these competitive processes are energy, type of incident projectile and target material dependent.
In the process of energy loss of the incident particle, ionization is the dominant mechanism and an electron gas is created around its trajectory. We suppose that in the initial stages this gas is in equilibrium and a temperature could be defined.
In the vicinity of the projectile the increase of the temperature is significant in respect to room temperature, where processes are currently studied, and supplementary mechanisms for the formation of extended/complex defects must be considered: multiple self-interstitials and vacancy clusters as well as oxygen dimers and complexes with other impurities.
In this contribution the correlations between irradiation particles, their energy, ionization, rate of production of primary defects, spatial extension of the damaged region, local increase of the temperature, local microscopic values of the kerma, etc. are investigated using SRIM simulation and analytical calculation. Implications at the device level are also discussed.
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