UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS

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Conference: Bucharest University Faculty of Physics 2007 Meeting


Section: Nuclear and Elementary Particles Physics


Title:
Some aspects of the puzzle of the degradation of semiconductor detectors for HEP


Authors:
Ionel Lazanu(1), Sorina Lazanu(2)


Affiliation:
(1) University of Bucharest, Faculty of Physics,

Department of Atomic and Nuclear Physics

POBox MG-11, Bucharest-Măgurele

(2) National Institute for Materials Physics

POBox MG-7, Bucharest-Măgurele


E-mail
ionel.lazanu@gmail.com


Keywords:
degradation, ionization, detectors, HEP


Abstract:
An important tool for new development of the devices (detectors, cell solar, electronic circuit components) operating in high energy space environment or at accelerator facilities is to estimate or calculate damage effects due to the external radiation field, where they will be placed to work. In these conditions, the contribution of a large variety of particle species is to be considered as contributing to the degradation. For the prediction of radiation-induced degradation, simple analytical expressions or “scaling” relations are searched. In the present contribution we put in evidence that only in particular situations it is sufficient to consider only the first step of the damage process (as NIEL or CPD - i. e. the deposition of non-ionising energy in the semiconductor by the incident particles and the produced recoils), generally it is necessary to consider evolution processes, e.g. the generation of complex defects and annealing processes. Analytical results are presented and compared with experimental information.