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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-23 18:10 |
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Conference: Bucharest University Faculty of Physics 2022 Meeting
Section: Solid State Physics and Materials Science, Optics, Spectroscopy, Plasma and Lasers
Title:
Study of AII-BVI zinc based thin films for sensor applications
Authors:
Ana-Maria PANAITESCU (1), Dan GIURGIU (1), Vlad-Andrei ANTOHE (1, 2), Sorina IFTIMIE (1), Ana-Maria RĂDUȚĂ (1), Adrian RADU (1), Lucian ION (1), Ștefan ANTOHE (1, 3)
*
Affiliation:
1) University of Bucharest, Faculty of Physics, R&D Center for Materials and Electronic & Optoelectronic
Devices (MDEO), Atomiștilor Street 405, 077125 Măgurele, Ilfov, Romania
2) Université catholique de Louvain (UCLouvain), Institute of Condensed Matter and Nanosciences (IMCN),
Place Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgium
3) Academy of Romanian Scientists, 030167, Bucharest, Romania
E-mail
santohe@solid.fizica.unibuc.ro
Keywords:
ZnTe thin films; RF-magnetron sputtering; XRD; optical absorption; optical transmission; photodetectors.
Abstract:
ZnTe thin films were deposited via RF Magnetron Sputtering onto optical glass evaporated silver (Ag) substrates and electrically contacted with evaporated aluminium (Al). The sputtering procedure was carried out at 80 W in argon (Ar) gas atmosphere at 2.5*10^(-3) mbar working pressure, for 75 minutes at 220 °C. The samples were structurally characterized by X-ray diffraction (XRD) revealing amorphous ZnTe films. Morphological investigations allowed a first evaluation of the films’ thicknesses. Optical characterization was performed via absorption and transmission measurements in the spectral range between 200-1500 nm at room temperature. Subsequently, the thicknesses and band gap energy of ZnTe thin films were evaluated at 508.4 nm and 2.2 eV respectively. Moreover, they revealed high transmittance in IR and NIR region. Electrical measurements of Ag/ZnTe/Al sandwich structures -current-voltage characteristics at 6 temperatures ranging from 303 K to 354 K- were performed, thus allowing the identification of the suitable charge transport mechanisms through the structure along with their corresponding parameters. Based on the good optical and electrical properties these ZnTe thin films display, they show great potential as candidates for performant small wavelength photodetectors.
Acknowledgement:
Support from the "Executive Unit for Financing Higher Education, Research, Development and Innovation" (UEFISCDI, Romania) through the grants: PN-III-P1-1.1-TE-2019-0868 (TE 115/2020) and PN-III-P1-1.1-TE-2019-0846 (TE 25/2020) is acknowledged.
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