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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2024-11-22 1:35 |
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Conference: Bucharest University Faculty of Physics 2024 Meeting
Section: Solid State Physics and Materials Science
Title:
Advancements in gas detection: metal oxide semiconductors deposited by pulsed laser deposition
Authors:
Stefan DOBRESCU (1), Mihaela FILIPESCU (2), Stefan ANTOHE (1)
*
Affiliation:
1) Faculty of Physics, University of Bucharest, 077125 Magurele, Romania
2) National Institute for Laser, Plasma and Radiation Physics, 077125 Magurele, Romania
E-mail
stefan9610@yahoo.com
Keywords:
semiconductors, PLD, metal oxide, sensor
Abstract:
Metal oxide semiconductors (MOS) deposited via pulsed laser deposition (PLD) have emerged as highly effective materials for gas detection due to their unique structural, electrical, and chemical properties. PLD is a versatile technique that enables the precise control of film thickness, composition, and crystallinity, which are crucial for optimizing the sensitivity and selectivity of gas sensors. This deposition method allows for the fabrication of MOS films with tailored nanostructures, including nanoparticles, nanowires, and thin films, which enhance surface area and facilitate gas adsorption and reaction processes. The sensitivity of MOS sensors to various gases, such as nitrogen dioxide (NO₂), carbon monoxide (CO), ammonia (NH3), and volatile organic compounds, is significantly influenced by the material's microstructure and the presence of surface defects, which can be finely tuned through PLD parameters. For instance, zinc oxide (ZnO), tungsten trioxide (WO3), tin dioxide (SnO2), and titanium dioxide (TiO2) are commonly used MOS materials in gas sensors due to their high surface reactivity and stability. PLD enables the incorporation of dopants and the creation of heterostructures, further enhancing the sensor performance by modifying the electronic properties and facilitating charge transfer during gas interactions. Studies have demonstrated that MOS sensors deposited by PLD exhibit rapid response times, high sensitivity, and good stability at various operating temperatures. The deposition process also allows for the integration of these sensors onto flexible and rigid substrates, broadening their application scope in portable and wearable devices. Moreover, the ability to deposit thin films with uniform thickness and minimal defects contributes to the reproducibility and reliability of the sensors.
References:
1. Goel, N.; Kunal, K.; Kushwaha, A.; Kuma, M. Metal oxide semiconductors for gas sensing. Eng. Rep. 2022, e12604
2. Preiß, E. M., Rogge, T., Krauß, A., & Seidel, H. (2016). Tin oxide-based thin films prepared by pulsed laser deposition for gas sensing. Sensors and Actuators B: Chemical, 236, 865–873
3. Atanasova, G., Og. Dikovska, A., Dilova, T., Georgieva, B., Avdeev, G. V., Stefanov, P., & Nedyalkov, N. N. (2018). Metal-oxide nanostructures produced by PLD in open air for gas sensor applications. Applied Surface Science
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