UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS

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2024-11-22 2:06

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Conference: Bucharest University Faculty of Physics 2024 Meeting


Section: Solid State Physics and Materials Science


Title:
Physical properties of AZO thin films prepared by Pulsed Laser Deposition (PLD) technique


Authors:
Elena-Isabela BANCU (1,2), Maria-Luiza Stingescu (1,2), Florin Andrei1,Mihai-Robert ZAMFIR (1), Valentin ION (1), Sorina IFTIMIE (2), Nicu Doinel SCĂRIȘOREANU (1), Stefan ANTOHE (2,3)


*
Affiliation:
1) National Institute for Laser, Plasma and Radiation Physics, Str. Atomistilor nr. 409, Magurele 077125, Romania

2) Faculty of Physics, University of Bucharest, 405 Atomistilor Street, 077125 Magurele, Romania

3) Academy of Romanian Scientists, Ilfov St 3, Bucharest 050045, ROMANIA


E-mail
elena.bancu@inflpr.ro


Keywords:
Transparent conductive oxides (TCO), AZO Thin Films, PLD


Abstract:
This study focuses on preparation and characterization of transparent conductive films (TCO) based on Al doped zinc oxide (AZO). This material is suitable as a TCO due to its specific properties, such as relatively low cost and low toxicity, compared with other TCOs, such as Indium-Tin Oxide (ITO) [1-2]. The study aims to enhance the physical characteristics of AZO films fabricated through pulsed laser deposition (PLD) using a solid-state Nd: YAG laser (266 nm). The AZO layers were deposited using a ceramic ZnO: Al2O3 (98:2 wt%) target onto silicon and glass substrates at a temperature of 300°C both in vacuum and oxygen atmosphere. After deposition, the structural properties of AZO films were analyzed using X-ray diffraction (XRD) measurements. The optical characterization of the samples was carried out using spectroscopic ellipsometry (SE) and UV-VIS-NIR spectrophotometry in the spectral range of 300-1700 nm. Additionally, the morphology of the films was studied using an atomic force microscope (AFM). Finally, the electrical characterization was assessed using a four-point measurement technique. The structural analysis revealed that all AZO films exhibited characteristic (002) diffraction peaks associated with the wurtzite structure. Furthermore, the transmission coefficient of a single layer of AZO across the entire visible spectrum exceeded 80%.


References:

[1] S. Fernandez, F.B. Naranjo – „Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications”, Solar Energy Materials & Solar Cells 94 (2010) 157–163

[2] Nicoleta VASILE, Sorina IFTIMIE, Tomy ACSENTE, Claudiu LOCOVEI, Alina Irina CĂLUGĂR, Adrian RADU, Lucian ION, Vlad-Andrei ANTOHE, Dumitru MANICA, Ovidiu TOMA, Gheorghe DINESCU, and Ștefan ANTOHE